Marking on semiconductor wafer using LASER is non-contacting dry process and this method has many advantages such as microfabrication, delicate, indelible, clean and flexible. LASER MARKING contributes stable traceability and high-efficiency for automation of production process.

It is applicable not only Si and GaAs wafer, but also new generation material such as SiC and GaN by model SL473DT2 equipped UV laser.

System Line-up
・New model for new generation material (DT2),
・Basic model for Low-volume processing (DS2) ,
・High Throughput model for high-volume processing (FS4)
・12inch model (GS3)


Items SL473DT2 SL473DS2 SL473FS4 SL473GS3
Laser Type Nd:YLF laser (TH) λ=349nm Nd:YLF laser(SHG) λ=523nm
Character Font SEMI-OCR (Dot, Engraving) , OCR-B (Engraving)
Marking Target Wafer surface observe-side (Option: Reverse-side, Both-side)
Throughput 70pcs/h 70pcs/h 240pcs/h 140pcs/h
Available numbers of Carrier 1 1 2 (Option: 4) 1 (Option: 2)
Wafer Size 4, 5, 6 inch (Option: 3, 8 inch, multiple size) 5, 6, 8 inch (Option: 4 inch, multiple size) 12 inch
Input power supply required AC200V±20V, 15A , Single phase, 50/60Hz AC200V±20V, 20A, Single phase, 50/60Hz
Vacuum utility -77±10kPa, 0.01㎥/min
Compressed air utility More than 490kPa, 0.01㎥/min N/A More than 490kPa, 0.01㎥/min
Other major option Online communication software, Dust collection unit, Wafer ID reader, others
Dimension [mm] Approx. 1,100(W) × 1,200(D) × 1,500(H) Approx. 1,220(W) × 1,100(D) × 1,455(H) Approx. 1,640(W) × 1,690(D) × 1,550(H)
Main unit Weight Approx. 600kg Approx. 630kg Approx. 900kg